BC807 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC817 / BC818
2
1
3
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Collector-Emitter Voltage
VCES
BC807
-50
BC808
-30
Collector-Emitter Voltage
VCE0
BC807
-45
BC808
-25
Emitter-Base Voltage
VEBO
-5
Collector Current (DC)
Ic
-800
Collector Dissipation
Pc
-310
Junction Temperature
Tj
150
Storage Temperature
Tstg
-65 to +150
UNIT
V
V
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS
MIN
Collector-Emitter Breakdown Voltage BVCEO Ic=-10mA, IB=0
BC807
-45
BC808
-25
Collector-Emitter Breakdown Voltage BVCES IC=-0.1mA, VBE=0
BC807
-50
BC808
-30
Emitter-Base Breakdown Voltage
BVEBO IE=-0.1mA, Ic=0
-5
Collector Cut-off Current
ICES VCE=-25V, V_BE=0
Emitter Cut-off Current
IEBO VEB=-4V, Ic=0
TYP
MAX UNIT
V
V
V
V
V
-100 nA
-100 nA
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