BC556 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* High Voltage: BC556, V_CEO=-65V
1
TO-92
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
: BC556
-80
: BC557
-50
: BC558
-30
Collector-emitter voltage
VCEO
: BC556
-65
: BC557
-45
: BC558
-30
Emitter-base voltage
VEBO
-5
Collector current (DC)
Ic
-100
Collector dissipation
Pc
500
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
V
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-off Current
I_CBO
VCB=-30V, IE=0
DC current gain
Collector-emitter saturation voltage
h_FE
VCE(sat)
VCE=-5V, Ic=2mA
110
Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
Base-emitter on voltage
VBE(on)
VCE=-5V, Ic=-2mA
-600
VCE=-5V, Ic=-10mA
Current gain bandwidth product
fT
VCE=-5V, Ic=-10mA, f=10MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
TYP
-90
-250
-700
-900
-660
150
MAX
-15
800
-300
-650
-750
-800
6
UNIT
nA
mV
mV
mV
mV
mV
MHz
pF
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