BC546 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* High Voltage: BC546, V_CEO=65V
1
TO-92
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
: BC546
80
: BC547
50
: BC548
30
Collector-emitter voltage
VCEO
: BC546
65
: BC547
45
: BC548
30
Emitter-base voltage
VEBO
: BC546
6
: BC547
6
: BC548
5
Collector current (DC)
Ic
100
Collector dissipation
Pc
500
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
V
V
V
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-off Current
I_CBO
VCB=30V, IE=0
DC current gain
h_FE
VCE=5V, Ic=2mA
110
Collector-emitter saturation voltage VCE(sat)
Ic=10mA, IB=0.5mA
Ic=100mA, IB=5mA
Base-emitter saturation voltage
VBE(sat)
Ic=10mA, IB=0.5mA
Ic=100mA, IB=5mA
Base-emitter on voltage
VBE(on)
VCE=5V, Ic=2mA
580
VCE=5V, Ic=10mA
TYP
90
200
700
900
660
MAX
15
800
250
600
700
720
UNIT
nA
mV
mV
mV
mV
mV
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-037,A