BC327 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors(PNP)

UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC337/338
1
TO-92
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-emitter voltage
VCES
: BC327
-50
: BC328
-30
Collector-emitter voltage
VCEO
: BC327
-45
: BC328
-25
Emitter-base voltage
VEBO
-5
Collector current (DC)
Ic
-800
Collector dissipation
Pc
625
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-emitter breakdown voltage BVCEO
Ic=-10mA, IB=0
: BC327
-45
: BC328
-25
Collector-emitter breakdown voltage BVCES
Ic=-0.1mA, VBE=0
: BC327
-50
: BC328
-30
Emitter-base breakdown voltage
BVEBO
IE=-10mA, Ic=0
-5
Collector Cut-off Current
I_CES
: BC327
VCE=-45V, IB=0
: BC328
VCE=-25V, IB=0
DC current gain
h_FE1
VCE=-1V, Ic=-100mA
100
h_FE2
VCE=-1V, Ic=-300mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-500mA, IB=-50mA
TYP
-2
-2
MAX
-100
-100
630
-0.7
UNIT
V
V
V
V
V
nA
nA
V
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-038,A