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| 9N90-Q Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
9N90-Q
9A, 900V N-CHANNEL
POWER MOSFET
ï® DESCRIPTION
The UTC 9N90-Q uses UTCâs advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
ï® FEATURES
* RDS(ON) < 1.4⦠@ VGS = 10V, ID = 4.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
ï® SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ï® ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N90L-TA3-T
9N90G-TA3-T
9N90L-T3P-T
9N90G-T3P-T
Package
TO-220
TO-3P
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
ï® MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A93.B
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