8N60-E Datasheet, PDF(1/6 Page) Unisonic Technologies

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8N60-E Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD

8N60-E

Preliminary

8A, 600V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 8N60-E is a high voltage and high current power

MOSFET, designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and have

a high rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power

supplies, PWM motor controls, high efficient DC to DC converters

and bridge circuits.

ï® FEATURES

* RDS(ON) < 1.4â¦@VGS = 10 V

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Note:

Ordering Number

Lead Free

Halogen Free

8N60L-TF1-T

8N60G-TF1-T

8N60L-TF2-T

8N60G-TF2-T

Pin Assignment: G: Gate D: Drain S: Source

Package

TO-220F1

TO-220F2

Pin Assignment

GDS

Packing

Tube

ï® MARKING

www.unisonic.com.tw

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