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4N90 Datasheet, PDF (1/6 Pages) Unisonic Technologies – 4 Amps, 900 Volts N-CHANNEL MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
4N90
Preliminary
4 Amps, 900 Volts
N-CHANNEL MOSFET
Power MOSFET
 DESCRIPTION
The UTC 4N90 is a N-channel enhancement MOSFET adopting
UTCâs advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC 4N90 is particularly applied in high efficiency switch
mode power supplies.
 FEATURES
* Typically 17nC low gate charge
* High switching speed
* 4A, 900V, RDS(ON)=4.2⦠@ VGS=10V
* Typically 5.6pF low CRSS
* 100% avalanche tested
* Improved dv/dt capability
 SYMBOL
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N90L-TA3-T
4N90G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-479.a
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