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4N65-R Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N65-R
Preliminary
4A, 650V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 4N65-R is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
1
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
 FEATURES
* RDS(ON) = 3.4Ω @VGS=10V, ID=2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
Power MOSFET
TO-220F1
 ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N65L-TF1-T
4N65G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
 MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
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