4N60_10 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
4N60
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„ FEATURES
* R_DS(ON) = 2.5Ω @V_GS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( C_RSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1
TO-220
1
TO-220F
1
TO-220F1
1
TO-252
1
TO-251
1
TO-263
1
TO-262
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60L-x-TA3-T
4N60G-x-TA3-T
4N60L-x-TF1-T
4N60G-x-TF1-T
4N60L-x-TF3-T
4N60G-x-TF3-T
4N60L-x-TM3-T
4N60G-x-TM3-T
4N60L-x-TN3-R
4N60G-x-TN3-R
4N60L-x-T2Q-T
4N60G-x-T2Q-T
4N60L-x-TQ3-R
4N60G-x-TQ3-R
4N60L-x-TQ3-T
4N60G-x-TQ3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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