4N60Z-E Datasheet, PDF(1/6 Page) Unisonic Technologies

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4N60Z-E Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD

4N60Z-E

4A, 600V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 4N60Z-E is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.

ï® FEATURES

* RDS(ON)=2.5â¦ @ VGS=10V, ID=2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

4N60ZL-TF1-T

4N60ZG-TF1-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-220F1

Pin Assignment

Packing

Tube

www.unisonic.com.tw

1 of 6

QW-R502-A22. A

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