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| 4N60-E Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL JUNCTIN SILICON FET | |||
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UNISONIC TECHNOLOGIES CO., LTD
4N60-E
4A, 600V N-CHANNEL
POWER MOSFET
ï® DESCRIPTION
The UTC 4N60-E is a high voltage power MOSFET
and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters
and bridge circuits.
ï® FEATURES
* RDS(ON) < 2.5⦠@ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
ï® SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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