4128 Datasheet, PDF (1/2 Pages) Unisonic Technologies – HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

UTC 4128
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4128 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
1
* High switching speed
TO-126
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 4128L
RATINGS
400
200
7
5
40
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Maintenance Voltage V_{CEO (SUS)} I_C=10mA, I_B=0
200
Collector-Base Breakdown Voltage
V _{(BR) CBO} I_C=1mA, I_B=0
400
Emitter-Base Breakdown Voltage
V _{(BR) EBO} I_E=1mA, I_C=0
7
Collector-Base Cutoff Current
I_CBO
V_CB=400V, I_E=0
Collector-Emitter Cutoff Current
I_CEO
V_CE=200V, I_B=0
Emitter-Base Cutoff Current
I_EBO
V_EB=7V, Ic=0
DC Current Gain
h_{FE (1)} V_CE=10V, Ic=0.5A
10
h_{FE (2)} V_CE=5V, Ic=2A
10
Collector-Emitter Saturation Voltage
V_{CE (sat)}
I_C=1A, I_B=0.2A
I_C=4A, I_B=1A
Base-Emitter Saturation Voltage
V_{BE (sat)} I_C=2A, I_B=0.5A
Fall Time
tf
I_C=2A, I_B1= -I_B2 = 0.4A
Storage Time
ts
I_C=2A, I_B1= -I_B2 = 0.4A
Feature Frequency
f_T
V_CE=10V, Ic=0.5A
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
TYP MAX
100
100
100
60
40
0.8
2
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
1
QW-R204-020,A