4124 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

UTC 4124
NPN TRIPLE DIFFUSED SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4124 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
1
* High switching speed
TO-126
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number:4124L
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
RATINGS
400
200
7
1.5
20
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Cut-off Frequency
SYMBOL
V_{CEO (SUS)}
V _{(BR) CBO}
V _{(BR) EBO}
I_CBO
I_CEO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
tf
ts
f_T
TEST CONDITIONS
I_C=10mA, I_B=0
I_C=1mA, I_B=0
I_E=1mA, I_C=0
V_CB=400V, I_E=0
V_CE=200V, I_B=0
V_EB=7V, Ic=0
V_CE=10V, Ic=0.2A
V_CE=5V, Ic=1.5A
I_C=0.4A, I_B=0.1A
I_C=1.5A, I_B=0.5A
I_C=0.8A, I_B=0.2A
I_C=1A, I_B1= -I_B2 = 0.2A
I_C=1A, I_B1= -I_B2 = 0.2A
V_CE=10V, Ic=0.1A
MIN TYP MAX UNIT
200
V
400
V
7
V
100
µA
100
µA
100
µA
10
60
5
40
0.5
V
2
V
1.2
V
0.7
µs
4
µs
4
MHz
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
1
QW-R204-019,A