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3N60A Datasheet, PDF (1/8 Pages) Unisonic Technologies – 3A, 600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
3N60A
3A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 3N60A is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used in the high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
„ FEATURES
* VDS = 600V, ID = 3A
* RDS(ON) = 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N60AL-TF3-T
3N60AG-TF3-T
3N60AL-TN3-R
3N60AG-TN3-R
3N60AL-TN3-T
3N60AG-TN3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-610.A