30N06V-Q Datasheet, PDF(1/6 Page) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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30N06V-Q Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

30N06V-Q

Preliminary

60V, 30A N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 30N06V-Q is a low voltage power MOSFET and is

designed to have better characteristics, such as fast switching time,

low gate charge, low on-state resistance and excellent avalanche

characteristics. This power MOSFET is usually used at automotive

applications in power supplies, high efficient DC to DC converters

and battery operated products.

ï® FEATURES

* RDS(ON) < 40mâ¦@VGS = 10 V, ID=15A

* Fast switching capability

* Avalanche energy specified

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

Package

30N06VL-TM3-T

30N06VG-TM3-T

TO-251

Note: Pin Assignment: G: Gate D: Drain S: Source

Pin Assignment

Packing

Tube

www.unisonic.com.tw

1 of 6

QW-R502-A29. a

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