2SK303 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amp Applications

UTC 2SK303
Low-Frequency General-Purpose
Amplifier Applications
FEATURES
* Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
JFET
2
1
3
SOT-23
1: Drain 2: Source 3: Gate
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Drain-to-Source Voltage
VDSS
Gate-to-Drain Voltage
VGDS
Gate Current
IG
Drain Current
ID
Allowable Power Dissipation
PD
Junctin Temperature
Tj
Storage Temperature
Tstg
RATINGS
30
-30
10
20
200
150
-55 ~ +150
UNIT
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Gate-to-Drain
SYMBOL TEST CONDITIONS
V(BR)GDS ^IG=-10μA
Gate-to-Source Leakage Current IGSS VGS=-20V
Zero-Gate Voltage Drain Current
Cutoff Voltage
IDSS*
VGS(off)
VDS=10V, VGS=0
VDS=10V, ID=1μA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1MHz
Input Capacitance
CiSS VDS=10V, VGS=0, f=1MHz
Reverse Transfer Capacitance
CrSS VDS=10V, VGS=0, f=1MHz
Drain-to- Source ON Resistance RDS (ON) VDS=10mV, VGS=0
CLASSIFICATION OF IDSS
RANK
MARKING CODE
IDSS (mA)
V2
V2
0.6 ~ 1.5
V3
V3
1.2 ~ 3.0
MIN TYP
-30
0.6*
-1
2.5
6.0
5
1.5
250
V4
V4
2.5 ~ 6.0
MAX
-1.0
12.0*
-4
UNIT
V
nA
mA
V
mS
pF
pF
Ω
V5
V5
5.0 ~ 12.0
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-071,A