2SD965B_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

UTC 2SD965B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965B : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
1
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
*Pb-free plating product number: 2SD965BL
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
RATINGS
40
30
7
750
5
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO Ic=100µA,IE=0
40
Collector-emitter breakdown
voltage
BVCEO ^Ic=1mA,IB=0
30
Emitter-base breakdown voltage
BVEBO IE=10µA,Ic=0
7
Collector cut-off current
ICBO VCB=30V,IE=0
Emitter cut-off current
IEBO VEB=7V,Ic=0
hFE 1 VCE=2V,Ic=1mA
DC current gain(note)
hFE 2 VCE=2V,Ic=0.5A
230
hFE 3 VCE=2V,Ic=2A
150
Collector-emitter saturation voltage VCE(sat) Ic=3A, IB= 0.1A
Current gain bandwidth product
fT
VCE=6V,Ic=50mA
Output capacitance
Cob VCB=20V,IE=0, f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
Q
230-380
R
340-600
UNIT
V
V
V
mW
A
°C
°C
TYP MAX
200
200
200
800
1
150
50
UNIT
V
V
V
nA
nA
V
MHz
pF
S
560-800
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
www.unisonic.com.tw
1
QW-R201-078,B