2SD882ANL Datasheet, PDF (1/3 Pages) Unisonic Technologies – MEDIUM POWER LOW VOLTAGE TRANSISTOR

UTC2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772ANL
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
1
* Voltage regulator
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
*Pb-free plating product number: 2SD882ANLK
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
PARAMETERS
SYMBOL
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector dissipation
Pc
Collector current(DC)
Ic
Collector current(PULSE)
Ic
Base current
IB
Junction Temperature
Tj
Storage Temperature
TSTG
RATINGS
40
30
5
1
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=3V,Ic=0
DC current gain(note 1)
hFE1
VCE=2V,Ic=20mA
30
hFE2
VCE=2V,Ic=1A
100
Collector-emitter saturation voltage VCE(sat)
Ic=2A,IB=0.2A
Base-emitter saturation voltage
VBE(sat)
Ic=2A,IB=0.2A
Current gain bandwidth product
fT
VCE=5V,Ic=0.1A
Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
UNIT
nA
nA
400
0.5
V
2.0
V
MHz
pF
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R211-016,B