2SD880 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

UTC 2SD880
NPNEPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power
amplifier applications.
FEATURE
*High DC Current Gain:
hFE=300(Max.)(VCE=5V,IC=0.5A)
*Low Saturation Voltage:
VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
*High Power Dissipation:
PC=30W (Ta=25°C)
*Complementary to 2SB834
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
*Pb-free plating product number: 2SD880L
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Maximum Voltages and currents
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Maximum Power Dissipation
Total Power Dissipation
PD
Maximum Temperature
Junction Temperature Range
TOPR
Storage Temperature Range
TSTG
VALUE
60
60
7
3
0.5
30
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCEO
IC=50mA,IE=0
Collector Cut-Off Current
ICBO
VCB=60V,IE=0
Emitter Cut-Off Current
IEBO
VEB=7V,IC=0
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=300mA
Base-Emitter Saturation Voltage
VBE(ON)
VCE=5V, IC=500mA
DC Current Gain
hFE
IC=500mA, VCE=5V
Current gain bandwidth product
fT
VCE =5V, IC =500mA
MIN.
60
60
TYP.
3
MAX.
100
100
1
1
300
UNIT
V
µA
µA
V
V
MHZ
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R203-013,B