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| 2SD879_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – 1.5V, 3V STROBE APPLICATIONS | |||
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UNISONIC TECHNOLOGIES CO., LTD
2SD879
NPN EPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE
APPLICATIONS
ï® DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for
1.5V and 3V strobe applications.
ï® FEATURES
* In applications where two NiCd batteries are used to provide 2.4V,
two 2SD879s are used.
* The charge time is approximately 1 second faster than that of
germanium transistors.
* Less power dissipation because of lWO Collector-to-Emitter Voltage
VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high
current.
ï® ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
-
2SD879G-AB3-R
2SD879L-T92-B
2SD879G-T92-B
2SD879L-T92-K
2SD879G-T92-K
Note: Pin Assignment: E: Emitter C: Collector
Package
SOT-89
TO-92
TO-92
B: Base
Pin Assignment
123
BCE
ECB
ECB
Packing
Tape Reel
Tape Box
Bulk
ï® MARKING
SOT-89
TO-92
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R208-010.C
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