2SD879 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.5V, 3V Strobe Applications

UTC 2SD879
NPN EPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor,
designed for 1.5V and 3V strobe applications.
FEATURES
*In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
*The charge time is approximately 1 second faster than
that of germanium transistors.
*Less power dissipation because of lwo
Collector-to-Emitter Voltage V_CE(sat), permitting more
flashes of light to be emitted.
*Large current capacity and highly resistant to break-down.
*Excellent linearity of hFE in the region from low current to
high current.
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEX
20
Collector-Emitter Voltage
VCEO
10
Emitter-Base Voltage
VEBO
6
Collector Dissipation
P_D
1
Collector Current(DC)
Ic
3
Collector Current(PULSE)
Icp
5
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
Note: PULSE CONDITION -> 100 ms single pulse
UNIT
V
V
V
V
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Voltage
VCBO
IC=10uA, IE=0
30
Collector-Emitter Voltage
VCEX
IC=1mA, VBE=3V
20
Collector-Emitter Voltage
VCEO
IC=1mA, R_BE=∞
10
Emitter-Base Voltage
VEBO
IE=10uA, IC=0
6
Base-Emitter Voltage
VBE
VCE=-1V,IC=-2A
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
Emitter Cut-Off Current
IEBO
VEB=4V,Ic=0
DC Current Gain
hFE
VCE=2V, Ic=3A (pulse)
140
Collector-Emitter Saturation Voltage VCE(sat)
Ic=3A,IB=60mA (pulse)
Current Gain Bandwidth Product
fT
VCE=10V, Ic=50mA
Output Capacitance
Cob
VCB=10V,f=1MHz
Pulse: 1mS
TYP
0.83
210
0.3
200
30
MAX
1.5
1
1
400
0.4
UNIT
V
V
V
V
V
µA
µA
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-010,A