2SD718 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,120V,80W)

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier Output Stage.
*Complementary to 2SB688.
1
TO-3P
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
Pc
Tj
Tstg
RATINGS
120
120
5
10
1
80
150
-55 ~150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))
PARAMETER
SYMBOL
TEST CONDITION
MIN
Collector-Emitter Breakdown Voltage V(BR)CEO Ic=50mA,IB=0
120
Collector Cut-off Current
ICBO
VCB=120V,IE=0
Emitter Cut-off Current
IEBO
VEB=5V,Ic=0
DC Current Gain
HFE
VCE=5V,Ic=1A
55
Collector-Emitter Saturation Voltage VCE(sat) Ic=6A,IB=0.6A
Base-Emitter Voltage
VBE
VCE=5V,Ic=5A
Transition Frequency
fT
VCE=5V,Ic=1A
Collector Output Capacitance
Cob
VCB=10V,IE=0, f=1MHz
TYP
12
170
MAX
10
10
160
2.0
1.5
UNIT
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
R
55-110
O
80-160
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R214-003,A