2SD468 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

UTC 2SD468
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SB562
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
25
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Current
Ic
1
Collector Peak Current
Ic(peak)
1.5
Collector Power Dissipation
PC
0.9
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector to base breakdown voltage V(BR)CBO
Ic=10µA, IE=0
25
Collector to emitter breakdown
V(BR)CEO
Ic=1mA, RBE=∞
20
voltage
Emitter to base breakdown voltage V(BR)EBO
IE=10µA, IC=0
5
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
DC Current transfer ratio
hFE
VCE=2V, Ic=0.5A (note)
85
Collector to emitter saturation
VCE(sat)
Ic=0.8A, IB=0.08A (note)
voltage
Base to emitter voltage
VBE
VCE=2V, Ic=0.5A (note)
Gain bandwidth product
fT
VCE=2V, Ic=0.5A (note)
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Note: Pulse test
TYP
0.2
0.79
190
22
MAX
1
240
0.5
1
UNIT
V
V
V
µA
V
V
MHz
pF
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