2SD2136 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

UTC2SD2136 NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power amplification
FEATURES
*High forward current transfer ratio hFE which has
satisfactory linearity.
*Low collector to emitter saturation voltage VCE(sat)
*Allowing supply with the radial taping.
1
TO-126
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Peak Collector Current
Icp
Collector Dssipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
1: BASE 2:COLLECTOR 3: EMITTER
RATING
60
60
6
3
5
1.5
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Voltage
VCEO Ic=30mA ,IB=0
60
Collector Cut-off Current
ICEO VCE=60V,IB=0
Collector Cut-off Current
Emitter Cut-off Current
ICES
IEBO
VCE=60V,VBE=0
VEB=6V,Ic=0
DC Current Transfer Ratio
hFE1* VCE=4V,Ic=1A
40
hFE2 VCE=4V,Ic=3A
10
Collector-Emitter Saturation Voltage VCE(sat) Ic=3A,IB=0.375A
Base-Emitter Voltage
Transition Frequency
Fall time
Turn on time
VBE
VCE=4V,Ic=3A
fT
VCE=5V,IE= -0.1A,f=200MHz
tf
Ic=1A, IB1=0.1A, IB2= -0.1A
ton
Storage Time
tstg
TYP MAX
300
200
1
250
1.2
1.8
220
0.4
0.5
2.5
UNIT
V
µA
µA
mA
V
V
MHz
µS
µS
µS
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R204-011,A