2SD1898 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (80V, 1A)

UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*High VCEO= 80V
*High IC= 1A (DC)
1
*Good hFE linearity.
*Low VCE(sat)
*Complements the 2SB1260.
SOT-89
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current(DC)
Ic
Collector Current(PULSE)*1
Icp
Collector Power Dissipation*2
Pc
Collector Power Dissipation*2
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
*1 Duty=/1/2,Pw=200ms
*2 When mounted on a 40*40*0.7 mm ceramic board.
1:EMITTER 2:COLLECTOR 3:BASE
RATING
100
80
5
1
2
0.5
2
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Breakdown Voltage
BVCBO ^{Ic= 50μA}
100
Collector Emitter Breakdown Voltage BVCEO Ic= 1mA
80
Emitter Base Breakdown Voltage
BVEBO ^IE=50μA
5
Collector Cut-Off Current
ICBO VCB=80V, IE=0A
Emitter Cut-Off Current
IEBO VEB=4V , IC=0A
DC Current Transfer Ratio
hFE VCE=3V,Ic= 0.5A
82
Collector-Emitter Saturation Voltage VCE(sat) Ic=500mA,IB= 20mA
Transition Frequency
fT
VCE= 10V, IE= -50 mA, f=100MHz
Output Capacitance
CLASSIFICATION OF hFE
Cob VCB= 10V, IE= 0 A, f=1MHz
RANK
P
Q
RANGE
82-180
120-270
TYP MAX
1
1
390
0.15 0.4
100
20
R
180-390
UNIT
V
V
V
μA
μA
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-030,A