2SD1691 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON POWER TRANSISTOR

UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR
LOW COLLECTOR SATURATION
VOLTAGE LARGE CURRENT
FEATURES
*High Power Dissipation: Pc=1.5W(Ta=25℃)
*Complementary to 2SB1151
1
TO-126C
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Ic
Pulse (Note 1)
Icp
Base Current
IB
Ta=25℃
Collector Power Dissipation
Tc=25℃
Pc
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note 1 :PW≦10ms,Duty Cycle≦50%
RATING
60
60
7
5
8
1
1.5
20
150
-55 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃,unless otherwise specified )
CHARACTERISTIC
SYMBOL
TEST CONDITIONS MIN
Collector Cut-off Current
ICBO
VCB=50V,IE=0
Emitter Cut-off Current
IEBO
VEB=7V,Ic=0
DC Current Gain
hFE1
VCE=1V,Ic=0.1A
60
hFE2*
VCE=1V,Ic=2A
160
hFE3
VCE=2V,Ic=5A
50
Collector-Emitter Saturation Voltage
VCE(sat)* Ic=2A,IB=0.2A
Base-Emitter Saturation Voltage
VBE(sat)* Ic=2A,IB=0.2A
TYP. MAX. UNIT
10 ^μA
10 ^μA
400
-
0.1 0.3 V
0.9 1.2 V
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
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