2SD1664 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (32V, 1A)

UTC2SD1664 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER NPN
TRANSISTOR
DESCRIPTION
The UTC 2SD1664 is an epitaxial planar type NPN silicon
transistor.
FEATURES
*Low VCE(sat): VCE (sat)= 0.15V(Typ)
(Ic/IB= 500mA/50mA)
*Complement the 2SB1132.
1
SOT-89
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
PULSE (Note1)
Ic
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
Note1: Duty=1/2,Pw=20ms
Note2: When mounted on a 40*40*0.7 mm ceramic board.
1:EMITTER 2:COLLECTOR 3:BASE
RATING
40
32
5
1
2
0.5
2 (Note2)
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Breakdown Voltage
BVCBO ^{Ic= 50μA}
40
Collector Emitter Breakdown Voltage BVCEO Ic= 1mA
32
Emitter Base Breakdown Voltage
BVEBO ^IE=50μA
5
Collector Cut-Off Current
ICBO
VCB=20V
Emitter Cut-Off Current
IEBO
VEB= 4V
DC Current Transfer Ratio
hFE
VCE= 3V,Ic= 100mA
82
Collector-Emitter Saturation Voltage VCE(sat) Ic/IB=500mA /50mA
Transition Frequency
fT
VCE=5V, IE= - 50 mA,f=100MHz
Output Capacitance
Cob VCB= 10V, IE= 0 A,f=1MHz
TYP
0.15
150
15
MAX
0.5
0.5
390
0.4
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-025,A