2SD1624 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH CURRENT SWITCHIG APPLICATION

UTC 2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed.
*Large current capacity and wide ASO.
MARKING
XX
DG
1
SOT-89
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
6
Collector Power Dissipation( Tc=25°C)
Pc
500
Collector Current(DC)
Ic
3
Collector Current(PULSE)
Icp
6
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cutoff Current
ICBO
VCB=40V,IE=0
Emitter Cutoff Current
IEBO
VEB=4V,IC=0
DC Current Gain (note)
hFE
VCE=2V, Ic=100mA
100
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
Output Capacitance
Cob
VCE=10V,f=1MHz
C-E Saturation Voltage
VCE(sat)
IC=2A,IB=100mA
B-E Saturation Voltage
VBE(sat)
IC=2A,IB=100mA
C-B Breakdown Voltage
V(BR)CBO
IC=10µA,IE=0
60
C-E Breakdown Voltage
V(BR)CEO
IC=1mA,RBE=∞
50
E-B Breakdown Voltage
V(BR)EBO
IE=10µA,IC=0
6
Turn-on Time
ton
See test circuit
TYP
150
25
0.19
0.94
70
MAX
1
1
560
0.5
1.2
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-005,A