2SD1609 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
FEATURES
* Low frequency high voltage amplifier
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
MIN
Collector-Base Voltage
BVCBO
Collector-Emitter Voltage
BVCEO
Emitter-Base Voltage
BVEBO
Collector Current
Ic
Total Power Dissipation (Ta=25°C)
Ptot
Junction Temperature
Tj
Storage Temperature
Tstg
-50
MAX
160
160
5
100
1.25
150
150
UNIT
V
V
V
mA
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Voltage
BVCBO
IC=10µA
160
Collector-Emitter Voltage
BVCEO
IC=1mA
160
Emitter-Base Voltage
BVEBO
IE=10µA
5
Collector Cut-off Current
ICBO
VCB=140V
DC Current Gain
hFE1
VCE=5V, Ic=10mA
60
hFE2
VCE=5V, Ic=1mA
30
Collector-Emitter Saturation Voltage VCE(sat)
Ic=30mA, IB=3mA
Base-Emitter On Voltage
VBE(on)
VCE=5V, Ic=10mA
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA
145
Output Capacitance
Cob
VCB=10V, f=1MHz
TYP
3.8
MAX
10
320
2
1.5
UNIT
V
V
V
µA
V
V
MHz
pF
CLASSIFICATION OF h_FE1
RANK
RANGE
B
60-120
C
100-200
D
160-320
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R204-008,A