2SD1060 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UTC2SD1060 NPNEPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage:
VCE(sat)=0.4V max/IC=3A, IB=0.3A
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters,
and other general large-current switching.
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
TSTG
VALUE
60
50
6
5
9
1
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
Collector Cut-Off Current
ICBO
VCB=40V,IE=0
Emitter Cut-Off Current
IEBO
VEB=4V,IC=0
DC Current Gain
hFE1
VCE=2V, IC=1A
hFE2
VCE=2V, IC=3A,
Gain bandwidth product
fT
VCE =5V, IC =1A
Output Capacitance
Cob
VCB =10V, f=1MHz
Collector-to-Emitter Saturation Voltage VCE(sat)
IC =3A, IB =0.3A
Collector-to-Base Breakdown Voltage V(BR)CBO
IC =1mA, IE =0
Collector-to-Emitter Breakdown
V(BR)CEO
IC =1mA, RBE =∞
Voltage
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IC =0, IE =1mA
Turn-ON Time
tON
See specified test circuit
Storage Time
tstg
See specified test circuit
Fall Time
tf
See specified test circuit
MIN.
70
30
60
50
6
TYP.
30
100
0.1
1.4
0.2
MAX.
0.1
0.1
360
UNIT
mA
mA
MHZ
pF
0.4
V
V
V
V
µs
µs
µs
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R208-023,B