2SC5569 Datasheet, PDF (1/4 Pages) Unisonic Technologies – DC/DC CONVERTER APPLICATIONS

UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
DC/DC CONVERTER
APPLICATIONS
FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching.
*High allowable power dissipation.
*Complementary to 2SA2016.
APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes
1
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Current (Pulse)
Icp
Base Current
IB
Collector Dissipation
Tc=25°C
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
* Mounted on ceramic board (250mm²Ã—0.8mm)
1:EMITTER 2:COLLECTOR 3:BASE
VALUE
80
50
6
7
10
1.2
1.3*
3.5
150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
TEST CONDITIONS
Ic=10μA,IE=0
Ic=1mA,RBE=∞
IE=10μA,IE=0
MIN TYP
80
50
6
Collector Cut-Off Current
ICBO VCB=40V,IE=0
Emitter Cut-Off Current
IEBO VEB=4V,Ic=0
DC Current Gain
hFE VCE=2V,Ic=500mA
200
Collector to Emitter Saturation Voltage _VCE(sat) Ic=3.5A,IB=175mA
160
Ic=2A,IB=40mA
110
Base to Emitter Saturation Voltage
VBE(sat) Ic=2A,IB=40mA
0.83
Gain Bandwidth Product
fT
VCE=10V,Ic=500mA
330
Output Capacitance
Cob VCB=10V, f=1MHz
28
Turn-On Time
ton See specified Test Circuit
30
Storage Time
tstg See specified Test Circuit
420
MAX
0.1
0.1
560
240
170
1.2
UNIT
V
V
V
μA
μA
mV
mV
V
MHz
pF
ns
ns
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-031,A