2SC4548 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH VOLTAGE DRIVER
APPLICATION
FEATURES
1
*High breakdown voltage.
*Excellent hFE linearity.
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Current (PULSE)
Icp
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
RATING
400
400
5
200
400
1.3
150
-55 ~ +150
UNIT
V
V
V
mA
mA
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collect-Base Breakdown Voltage
BVCBO IC= 10µA,IE=0
400
Collect-Emitter Breakdown Voltage
BVCEO IC= 1mA,IB=0,RBE=∞
400
Emitter-Base Breakdown Voltage
BVEBO IE= 10µA,IC=0
5
Collector Cutoff Current
ICBO VCB= 300V,IE=0
Emitter Cutoff Current
IEBO VEB=4V,IC=0
DC Current Transfer Ratio
hFE VCE=10V, Ic=50mA
60
Collect-Emitter Saturation Voltage
VCE(sat) IC=50mA,IB=5mA
Base-Emitter Saturation Voltage
VBE(sat) IC=50mA,IB=5mA
Output Capacitance
Cob VCB=30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=30V,f=1MHz
Gain-Bandwidth Product
fT
VCE=30V,IC=10mA
Turn-on Time
ton
See test circuit
Turn-off Time
toff
See test circuit
TYP
0.6
4
3
70
0.25
5.0
MAX
0.1
0.1
200
1.0
UNIT
V
V
V
µA
µA
V
V
pF
pF
MHz
µs
µs
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-027,A