2SC3835 Datasheet, PDF (1/4 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

UTC2SC3835 NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
APLLICATION
*Humidifier,DC-DC converter,and general purpose.
1
TO-3PN
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Base Current
IB
Collector Current
Ic
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
1: BASE 2:COLLECTOR 3: EMITTER
RATING
200
120
8
3
7
14
70
150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Emitter Breakdown Voltage BVCEO Ic= 50mA
120
Collector Cut-Off Current
ICBO VCB=200V, IE=0
Emitter Cut-Off Current
IEBO VEB= 8V, Ic =0
DC Current Transfer Ratio
hFE
VCE= 4V,Ic= 3A
70
Collector-Emitter Saturation Voltage VCE(sat) Ic=3A ,IB=0.3A
Base-Emitter Saturation Voltage
VBE(sat) Ic=3A ,IB=0.3A
Transition Frequency
fT
VCE=12V,IE=-0.5mA
Output Capacitance
Cob VCB= 10V, IE= 0 A,f=1MHz
Turn-on Time
ton
See specified Test Circuit
Storage Time
tstg
Fall Time
tf
TYP
30
110
MAX
100
100
220
0.5
1.2
0.5
3.0
0.5
UNIT
V
μA
μA
V
V
MHz
pF
µs
µs
µs
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R214-002,A