2SC3834 Datasheet, PDF (1/3 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

UTC2SC3834 NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon
transistor.
APLLICATION
1
*Humidifier,DC-DC converter,and general purpose.
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Base Current
IB
Collector Current (PULSE)
Ic
Collector Power Dissipation( Tc=25°C )
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
1: BASE 2:COLLECTOR 3: EMITTER
RATING
200
120
8
3
7
50
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Emitter Breakdown Voltage BVCEO Ic= 50mA
120
Collector Cut-Off Current
ICBO VCB=200V, IE=0
Emitter Cut-Off Current
IEBO VEB= 8V, Ic =0
DC Current Transfer Ratio
hFE
VCE= 4V,Ic= 3A
70
Collector-Emitter Saturation Voltage VCE(sat) Ic=3A ,IB=0.3A
Base-Emitter Saturation Voltage
VBE(sat) Ic=3A ,IB=0.3A
Transition Frequency
fT
VCE=12V,IE=-0.5mA,f=100MHz
Output Capacitance
Cob VCB= 10V, IE= 0 A,f=1MHz
TYP
30
110
MAX
100
100
220
0.5
1.2
UNIT
V
μA
μA
V
V
MHz
pF
TYPE SWITCHING CHARACTERISTCS (Common Emitter)
Vcc(V) RL(Ω)
Ic (A) VBB1(V) VBB2(V) IB1(A) IB2(A)
50
16.7
3
10
-5
0.3
-0.6
Ton(μA) Tstg(μA) Tf (μA)
0.5(max) 3.0(max) 0.5(max)
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R203-026,A