2SC3669 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

UTC2SC3669 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage
VCE(sat)= 0.5V(Max)
*High speed switching time: tstg=1.0μS(Typ.)
1
TO-251
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Base Current
IB
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
1:BASE 2:COLLECTOR 3: EMITTER
LIMITS
80
80
5
2
1
1
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Emitter Breakdown Voltage V(BR)CEO Ic= 10mA, IB= 0
80
Collector Cut-Off Current
ICBO VCB=80V, IE= 0
Emitter Cut-Off Current
IEBO VEB= 5V, Ic=0
DC Current Gain
hFE1 VCE=2V, Ic=0.5A
70
hFE2 VCE=2V, Ic=1.5A
40
Collector-Emitter Saturation Voltage VCE(sat) Ic=1A, IB=0.05A
Base- Emitter Saturation Voltage
VBE(sat) Ic=1A, IB=0.05A
Transition Frequency
fT
VCE=2V, Ic=0.5A
Collector Output Capacitance
Cob VCB= 10V, IE= 0, f=1MHz
TYP
0.15
0.9
100
30
MAX
1.0
1.0
240
0.5
1.2
UNIT
V
μA
μA
V
V
MHz
pF
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