2SC3468 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS

UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR FOR
VIDEO OUTPUT OF HIGH-DEFINITION
CRT DISPLAYS
FEATURES
* High breakdown voltage: V_CBO, V_CEO≧300V
* Small reverse transfer capacitance and excellent high
frequency characteristicF
1
SOT-89
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SC3468L
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
RATINGS
300
300
5
100
200
1.0
0 ~ +125
-65 ~ +125
UNIT
V
V
V
mA
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
I_CBO
I_EBO
h_FE
f_T
V_{CE (sat)}
V_{BE (sat)}
V_{(BR) CBO}
V_{(BR) CEO}
V_{(BR) EBO}
Cob
Cre
TEST CONDITIONS
V_CB = 200V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 10V, I_C = 10mA
V_CE = 30V, I_C = 10mA
I_C = 20mA, I_B = 2mA
I_C = 20mA, I_B = 2mA
I_C = 10µA, I_E = 0
I_C = 1mA, R_BE = ∞
I_E = 10µA, I_C = 0
V_CB = 30V, f = 1MHz
V_CB = 30V, f = 1MHz
MIN TYP MAX UNIT
0.1 µA
0.1 µA
40
320
150
MHz
0.6
V
1.0
V
300
V
300
V
5
V
2.6
pF
1.8
pF
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1
QW-R208-037,A