2SC3356 Datasheet, PDF (1/3 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
FEATURES
*Low Noise and High Gain
*High Power Gain
MARKING
R25
2
1
3
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
20
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
3
Collector current
Ic
100
Total power dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg
-65 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cutoff Current
I_CBO
V_CB=10V, I_E=0
Emitter Cutoff Current
I_EBO
V_EB=1V, I_C=0
DC Current Gain
h_FE
V_CE=10V, I_C=20mA
50
Gain bandwidth Product
fT
V_CE=10V, I_C=20mA
Feed-Back Capacitance
Cre
V_CB=10V, I_E=0, f=1.0MHz
Noise figure
NF
V_CE=10V, I_C=7mA, f=1.0GHz
TYP
7
MAX
1.0
1.0
300
1.0
2.0
UNIT
µA
µA
GHz
pF
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
50-160
B
160-240
C
240-300
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