2SC2881 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: VCEO= 120V
1
* High transition frequency: f_T=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Base current
IB
Collector power dissipation
PC
PC(Note 1)
Junction temperature
Tj
Storage temperature range
Tstg
Note 1: Mounted on ceramic substrate( 250mm²Ã—0.8t )
1:EMITTER 2:COLLECTOR 3:BASE
RATINGS
120
120
5
800
160
500
1000
150
-55 ~ 150
UNIT
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITION
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=1mA, Ic=0
Collector cut-off current
ICBO
VCB=120V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=5V, IC=100mA
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Base-emitter voltage
VBE
VCE=5V, IC=500mA
Transition frequency
fT
VCE=5V, IC=100mA
Collector output capacitance
Cob
VCB=10V, f=1MHz, IE=0
CLASSIFICATION OF hFE
RANK
RANGE
O
80 - 160
MIN TYP MAX UNIT
120
V
5
V
0.1 ^μA
0.1 ^μA
80
240
1.0 V
1.0 V
120
MHz
30 pF
Y
120 - 240
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R208-032,A