English
Language : 

2SC2482 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)
UTC2SC2482 NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
APPLICATIONS
*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
*COLOR TV HORIZ. DRIVER APPLICATIONS
*COLOR TV CHROMA OUTPUT APPLICATIONS
1
FEATURES
*High Voltage :V(BR)CEO= 300V
*Small Collector Output Capacitance: Cob=3.0pF(Typ.)
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Base Current
IB
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
LIMITS
300
300
7
100
50
900
150
-55 ~ +150
UNIT
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO VCB=240V IE= 0
Emitter Cut-Off Current
IEBO VEB= 7V Ic=0
DC Current Gain
hFE(1) VCE=10V,Ic=4mA
20
hFE(2) VCE=10V,Ic=20mA
30
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,IB=1mA
Base- Emitter Saturation Voltage
VBE(sat) Ic=10mA,IB=1mA
Transition Frequency
fT
VCE=10V, Ic=20mA
50
Collector Output Capacitance
Cob VCB=20V, IE= 0, f=1MHz
TYP
3.0
MAX
1.0
1.0
150
1.0
1.0
UNIT
μA
μA
V
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R211-015,A