2SC2235 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

UTC2SC2235 NPN EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
APPLICATIONS
DRIVER STAGE AMPLIFIER
APPLICATIONS
FEATURES
*Complimentary to 2SA965
1
TO-92NL
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base Voltage
VCBO
120
Collector-emitter Voltage
VCEO
120
Emitter-base Voltage
VEBO
5
Collector Power Dissipation
Pc
900
Collector Current
Ic
800
Emitter Current
IE
-800
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector Cut-off Current
ICBO
VCB=120V,IE=0
Emitter Cut-off Current
IEBO
VEB=5V,Ic=0
Collector-Emitter Breakdown Voltage VBR(CEO)
Ic=10mA,IB=0
120
Emitter-Base Breakdown Voltage
VBR(EBO)
IE=1 mA, Ic=0
5
DC Current Gain(note)
hFE
VCE=5V,Ic=100mA
80
Collector-Emitter Saturation Voltage VCE(sat)
Ic=500mA,IB=50mA
Base-Emitter Voltage
VBE
VCE=5V,Ic=500mA
Transition Frequency
fT
VCE=5V,Ic=100mA
Collector Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
TYP
120
MAX
100
100
240
1.0
1.0
30
UNIT
nA
nA
V
V
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
Y
120-240
O
80-160
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R211-012,A