2SC1384 Datasheet, PDF (1/2 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR TRANSISTOR

UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
*Low VCE(sat)
1
*2~3W output in complementary pair with 2SA684
TO-92L
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Peak Collector Current
Icp
1.5
Collector Current(DC)
Ic
1
Collector Dissipation( Ta=25°C)
Pc
1
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
Remark: Patting type:Pj=750mW
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
Collector-Base Voltage
VCBO
Ic=10µA,IE=0
60
Collector-Emitter Voltage
VCEO
Ic=2mA,IB=0
50
Emitter-Base Voltage
VEBO
IE=10µA,Ic=0
5
DC Current Gain
hFE1
VCE=10V,Ic=500mA
85
hFE2
VCE=5V,IB=1A
50
Collector-Emitter Saturation Voltage VCE(sat)
Ic=0.5A,IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=0.5A,IB=50mA
Current Gain Bandwidth Product
fT
VCE=10V,IB=50mA
Output Capacitance
Cob
VCB=10V,IE=0,f=1MHz
TYP
160
100
0.2
0.85
200
11
MAX
0.1
340
UNIT
µA
V
V
V
0.4 V
1.2 V
MHz
20 pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R202-001,A