2SB798 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

UTC 2SB798
PNP EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SB798 is designed for audio frequency power
amplifier applications, especially in Hybrid Integrated
Circuits.
FEATURES
*Low Collector Saturation Voltage:
VCE(sat)< -0.4V (Ic= -1.0A,IB=-100mA )
*Excellent DC Current Gain Linearity :
hFE=100 Typ.(VCE= -1.0V,Ic=-1.0A)
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Ic
Pulse(note 1)
Collector Dissipation (note 2)
PC
Junction Temperature
Tj
Storage Temperature
TSTG
Note 1: PW≦10ms,Duty Cycle≦50%
Note 2: When mounted on a ceramic substrate of 16cm²Ã—0.7 mm.
RATING
-30
-25
-5.0
-1.0
-1.5
2
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO VCB= -30V , IE= 0
Emitter Cut-Off Current
IEBO VEB= -5.0V, Ic= 0
DC Current Gain
hFE1 VCE= -1.0V,Ic= -100mA
90
DC Current Gain
hFE2 VCE= -1.0V,Ic= -1.0A
50
Base to Emitter Voltage
VBE
VCE= -6.0V,Ic= -10mA
-600
Collector-Emitter Saturation Voltage VCE(sat) Ic= -1.0A,IB= -0.10A
Base-Emitter Saturation Voltage
VBE(sat) Ic= -1.0A,IB= -0.10A
Gain Bandwidth Product
fT
VCE= -6.0V, IE= 10 mA
Output Capacitance
Cob VCB= -6.0V, IE= 0, f=1MHz
Note 3: PW≦350μs,Duty Cycle≦2%
TYP
200
100
-640
-0.25
-1.0
110
36
MAX
-100
-100
400
-700
-0.40
-1.2
UNIT
nA
nA
mV
V
V
MHz
pF
CLASSIFICATION OF hFE1
MARKING
DM
hFE1
90-180
DL
135-270
DK
200-400
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-020,A