2SB766A Datasheet, PDF (1/3 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION

UTC2SB766A PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY OUTPUT
AMPLIFICATION
FEATURES
*Large collector power dissipation Pc.
1
*Mini Power type package, allowing downsizing of the
equipment and automatic insertion through the tape
packing and the magazine packing.
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Ic
-1
A
Peak Collector Current
Icp
-1.5
A
Collector Power Dissipation
Pc*
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
*Printed circuit board :Copper foil area of 1cm² or more, and the board thickness of 1.7mm for the collector portion.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Base Voltage
VCBO ^{Ic= -10μA ,IE=0}
-60
V
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut-Off Current
VCEO
VEBO
ICBO
Ic= -2mA ,IB= 0
IE= -10μA, IC=0
VCB= -20V,IE=0
-50
V
-5
V
-0.1 ^μA
DC Current Transfer Ratio
hFE1
hFE2
VCE= -10V,Ic= -500mA *
VCE= -5V,Ic= -1A *
85
340
50
Collector-Emitter Saturation Voltage VCE(sat) Ic = -500mA,IB =-50mA*
-0.2 -0.4 V
Base-Emitter Saturation Voltage
VBE(sat) Ic = -500mA,IB =-50mA*
-0.85 -1.2 V
Transition Frequency
fT
VCB= -10V, IE= 50 mA, f=200MHz
200
MHz
Output Capacitance
Cob VCB= -10V, IE= 0, f=1MHz
20 30 pF
*Pulse measurement
CLASSIFICATION OF hFE1
RANK
Q
RANGE
85-170
R
120-240
S
170-340
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-028,A