2SB688_15 Datasheet, PDF (1/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
1
TO-3P
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation (T_C=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_J
T_STG
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SB688L
RATINGS
-120
-120
-5
-10
-1
80
150
-40 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
TEST CONDITIONS
V_CB = -120V, I_E = 0
V_EB = -5V, I_C = 0
I_C = -50mA, I_B= 0
V_CE = -5V, I_C = -1A
I_C = -5A, I_B = -0.5A
V_CE = -5A, I_C= -5A
V_CE = -5A, I_C= -1A
V_CB = -10V, I_E = 0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
55 ~ 110
MIN TYP MAX UNIT
-10
µA
-10
µA
-120
V
55
160
-2.5
V
-1.5
V
10
MHz
280
pF
O
80 ~ 160
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
1
QW-R214-007,A