2SB647 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

UTC 2SB647
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
APPLICATION
* Low frequency power amplifier
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-120
Collector-Emitter Voltage
VCEO
-80
Emitter-Base Voltage
VEBO
-5
Collector Current
Ic
-1
Collector Peak Current
Ic(peak)
-2
Collector Power Dissipation
Pc
0.9
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
TEST CONDITIONS
Ic= -10µA,IE =0
Ic= -1mA,RBE =∞
MIN
-120
-80
Emitter-Base Breakdown Voltage
V(BR)EBO
IE= -10µA,IC=0
-5
Collector Cut-Off Current
ICBO
VCB= -100V,IE=0
DC Current Transfer Ratio
hFE1
VCE= -5V, Ic= -150mA(note) 60
hFE2
VCE= -5V, Ic= -500mA(note) 30
Collector-Emitter Saturation Voltage VCE(sat) Ic= -500mA,IB= -50 mA(note)
Base-Emitter Saturation Voltage
VBE
VCE= -5V,Ic= -150mA(note)
Gain Bandwidth Product
fT
VCE= -5V,Ic= -150mA
Collector Output Capacitance
Cob
VCB= -10V,IE=0,f=1MHz
Note: Pulse test
TYP
140
20
MAX
-10
320
UNIT
V
V
V
µA
-1
V
-1.5 V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R211-010,A