2SB562 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

UTC 2SB562
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SD468
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-25
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current
Ic
-1
Collector Peak Current
Ic(peak)
-1.5
Collector Power Dissipation
PC
0.9
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector to base breakdown voltage V(BR)CBO
Ic=-10µA, IE=0
-25
Collector to emitter breakdown
V(BR)CEO
Ic=-1mA, RBE=∞
-20
voltage
Emitter to base breakdown voltage V(BR)EBO
IE=-10µA, IC=0
-5
Collector Cut-Off Current
ICBO
VCB=-20V, IE=0
DC Current transfer ratio
hFE
VCE=-2V, Ic=-0.5A (note)
85
Collector to emitter saturation
VCE(sat)
Ic=-0.8A, IB=-0.08A (note)
voltage
Base to emitter voltage
VBE
VCE=-2V, Ic=-0.5A (note)
Gain bandwidth product
fT
VCE=-2V, Ic=-0.5A (note)
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Note 1:Pulse test
TYP
-0.2
-0.8
350
38
MAX
-1
240
-0.5
-1.0
UNIT
V
V
V
µA
V
V
MHz
pF
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