2SB1198 Datasheet, PDF (1/3 Pages) Unisonic Technologies – LOW FREQUENCY PNP TRANSISTOR

UTC2SB1198 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP
TRANSISTOR
DESCRIPTION
The UTC 2SB1198 is an epitaxial planar type PNP silicon
transistor.
FEATURES
*High breakdown voltage : BVCEO= -80V
*Low VCE(sat) : VCE(sat)= -0.2V (Typ)
(Ic/IB = -0.5A/-50mA)
2
1
3
SOT-23
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
1:EMITTER 2:BASE 3: COLLECTOR
LIMITS
-80
-80
-5
-0.5
0.2
150
-55 ~ +150
UNIT
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Breakdown Voltage
BVCBO ^{Ic= -50μA}
-80
Collector Emitter Breakdown Voltage BVCEO Ic= -2mA
-80
Emitter Base Breakdown Voltage
BVEBO ^{IE= -50μA}
-5
Collector Cut-Off Current
ICBO VCB= -50V
Emitter Cut-Off Current
IEBO
VEB= -4V
Collector-Emitter Saturation Voltage VCE(sat) Ic/IB= -0.5A/-50mA
DC Current Transfer Ratio
hFE
VCE= -3V,Ic= -0.1A
120
Transition Frequency
fT
VCE=-10V,IE= 50 mA, f=100MHz
Output Capacitance
Cob VCB= -10V, IE= 0 A, f=1MHz
TYP
-0.2
180
11
MAX
-0.5
-0.5
-0.5
390
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
Q
120-270
AKQ
R
180-390
AKR
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R206-040,A