2SB1116 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON TRANSISTORS

UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier
* Medium Speed Switching
1
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
2SB1116
2SB1116A
VCBO
Collector-Emitter Voltage
2SB1116
2SB1116A
VCEO
Emitter-Base Voltage
Collector Current (DC)
VEBO
Ic
Collector Current (Pulse)*
Icp
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
*PW≦10ms,Duty Cycle≦50%
1: Emitter 2: Collector 3: Base
RATINGS
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
Collector Cut-off Current
ICBO VCB=-60V,IE=0
Emitter Cut-off current
IEBO VEB=-6V,Ic=0
DC Current Gain*
2SB1116
2SB1116A
hFE1 ^{VCE=-2V,Ic=-100mA}
hFE2 VCE=-2V,Ic=-1A
Base-Emitter On Voltage*
VBE(on) VCE=-2V,Ic=-50mA
Collector-Emitter Saturation Voltage* VCE(sat) Ic=-1A,IB=-50mA
Base-Emitter Saturation Voltage*
VBE(sat) Ic=-1A,IB=-50mA
Output Capacitance
Cob VCB=-10V,IE=0,f=1MHz
Current Gain Bandwidth Product
fT
VCE=-2V,Ic=-100mA
Turn On Time
tON _{Vcc=-10V,Ic=-100mA}
Storage Time
Fall Time
tSTG IB1=-IB2=-10mA
tF
VBE(off)=2 ~ 3V
*Pulse Test: PW≦350µs, Duty Cycle≦2%
MIN
135
135
81
-600
70
TYP
MAX
-100
-100
UNIT
nA
nA
600
400
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
-700
-0.3
-1.2
mV
V
V
pF
MHz
μs
μs
μs
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-066,A