2SA684 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR

UTC2SA684 PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
FEATURES
*Automatic insertion by radial taping possible.
1
*Complementary pair with 2SC1384
TO-92L
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Peak Collector Current
Icp
1.5
Collector Current(DC)
Ic
1
Collector Dissipation( Ta=25°C)
Pc
1
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
Collector-Base Voltage
VCBO
Ic=10µA,IE=0
60
Collector-Emitter Voltage
VCEO
Ic=2mA,IB=0
50
Emitter-Base Voltage
VEBO
IE=10µA,Ic=0
5
DC Current Gain
hFE1
VCE=10V,Ic=500mA
85
hFE2
VCE=5V,IB=1A
50
Collector-Emitter Saturation Voltage VCE(sat)
Ic=0.5A,IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=0.5A,IB=50mA
Current Gain Bandwidth Product
fT
VCE=10V,IB=50mA,f=200MHz
Output Capacitance
Cob
VCB=10V,IE=0,f=1MHz
TYP
0.2
0.85
200
20
MAX
0.1
340
UNIT
µA
V
V
V
0.4 V
1.2 V
MHz
30 pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R202-002,A