2SA1943 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

UTC 2SA1943
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
TO-3PL
ABSOLUTE MAXIMUM RATINGS
(T_C = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_J
T_STG
1:BASE 2:COLLECTOR 3:EMITTER
*Pb-free plating product number:2SA1943L
RATINGS
-230
-230
-5
-15
-1.5
150
0 ~ +125
-65 ~ +125
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
I_CBO
V_CB = -230V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB= -5V, I_C=0
Collector-Emitter Breakdown Voltage V_{(BR) CEO} I_C= -50mA, I_B=0
DC Current Gain
h_{FE (1) (Note)} V_CE= -5V, I_C= -1A
h_{FE (2)} V_CE= -5V, I_C= -7A
Collector-Emitter Saturation Voltage
V_{CE (sat)} I_C= -8A_, I_B= -0.8A
Base -Emitter Voltage
V_BE
V_CE= -5V, I_C= -7A
Transition Frequency
fT
V_CE= -5V, I_C= -1A
Collector Output Capacitance
Cob V_CB= -10V, I_E=0, f=1MHz
Note: h_FE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
MIN TYP MAX UNIT
-5.0 ^μA
-5.0 ^μA
-230
V
55
160
35
60
-1.5 -3.0
V
-1.0 -1.5
V
30
MHz
360
pF
UTC UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
1
QW-R214-006,A